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Manufactured byINTERSIL
Product groupModules
DescriptionIntersil Corporation FSL110D Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3.5 A, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:600 mΩ
DescriptionIntersil Corporation FSL110D Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3.5 A,Drain Current-Max (ID):3.5 A,Drain-source On Resistance-Max:600 m?
DescriptionINTERSIL FSL110D Integrated Circuit, 3.5a, 100v, 0.600 Ohm, Rad Hard, Segr Resistant, N-channel Power Mosfets
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