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Manufactured byINTERSIL
Product groupModules
DescriptionIntersil Corporation FSJ9055R4 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):55 A, Drain Current-Max (ID):55 A, Drain-source On Resistance-Max:29 mΩ
DescriptionIntersil Corporation FSJ9055R4 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):55 A,Drain Current-Max (ID):55 A,Drain-source On Resistance-Max:29 m?
DescriptionINTERSIL FSJ9055R4 Integrated Circuit, 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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