Product details
Manufactured byINTERSIL
Product groupModules
DescriptionIntersil Corporation FSF254R3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:170 mΩ
DescriptionIntersil Corporation FSF254R3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (Abs) (ID):18 A,Drain Current-Max (ID):18 A,Drain-source On Resistance-Max:170 m?
DescriptionINTERSIL FSF254R3 Integrated Circuit, 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
INTERSIL
View INTERSIL profile
Available from
Sourcing support available
Start a sourcing request