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✓Product overview Integrated silicon Solution inc.

IS45S81600F-7TLA2

Integrated silicon Solution inc. ยท DRAM's

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Integrated silicon Solution inc. IS45S81600F-7TLA2

Integrated silicon Solution inc. IS45S81600F-7TLA2 overview

Integrated Silicon Solution Inc IS45S81600F-7TLA2 Dram, Memory Density:134.2177 Mbit, Memory Width:8, Organization:16MX8, Supply Voltage-Nom (Vsup):3.3 V, Power...

Manufactured byIntegrated silicon Solution inc.
Part number or familyIS45S81600F-7TLA2
Product groupDRAM's

Product details

Manufactured byIntegrated silicon Solution inc.
Product groupDRAM's
DescriptionIntegrated Silicon Solution Inc IS45S81600F-7TLA2 Dram, Memory Density:134.2177 Mbit, Memory Width:8, Organization:16MX8, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):143 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST

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Manufactured by Integrated silicon Solution inc. View Integrated silicon Solution inc. profile
Product group DRAM's Explore DRAM's Explore Memory
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