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PTVA102001EAP1

Infineon ยท Transistor

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Infineon PTVA102001EAP1

Infineon PTVA102001EAP1 overview

Infineon Technologies AG PTVA102001EAP1 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Te...

Manufactured byInfineon
Part number or familyPTVA102001EAP1
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG PTVA102001EAP1 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:105 V, Highest Frequency Band:L BAND, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore RF Power Field-effect Transistors
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