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PTFA192001E

Infineon ยท Transistor

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Infineon PTFA192001E

Infineon PTFA192001E overview

Infineon Technologies AG PTFA192001E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Termi...

Manufactured byInfineon
Part number or familyPTFA192001E
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG PTFA192001E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore RF Power Field-effect Transistors
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