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CLY35-00ES

Infineon ยท Transistor

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Infineon CLY35-00ES

Infineon CLY35-00ES overview

Infineon Technologies AG CLY35-00ES Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Termin...

Manufactured byInfineon
Part number or familyCLY35-00ES
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG CLY35-00ES Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:14 V, Highest Frequency Band:C BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):2.8 A, Drain Current-Max (ID):2.8 A

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore RF Power Field-effect Transistors
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