Infineon IRFE210PBF overview
IRFE210PBF is a transistor made by Infineon. Infineon Technologies AG IRFE210PBF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:15, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):2.25 A…
Product details
Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG IRFE210PBF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:15, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):2.25 A, Drain-source On Resistance-Max:1.725 Ω
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