Infineon IRF6795MPBF overview
Infineon Technologies AG IRF6795MPBF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRF6795MPBF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (Abs) (ID):160 A, Drain Current-Max (ID):32 A, Drain-source On Resistance-Max:1.8 mΩ
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