Infineon IPW65R080CFDA overview
Infineon Technologies AG IPW65R080CFDA Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIOD...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IPW65R080CFDA Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:650 V, Number of Elements:1, Drain Current-Max (ID):43.3 A, Drain-source On Resistance-Max:80 mΩ
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