Infineon IPB034N06N3G overview
IPB034N06N3G is a transistor made by Infineon. Infineon Technologies AG IPB034N06N3G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):100…
Product details
Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG IPB034N06N3G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):100 A, Drain Current-Max (ID):100 A, Drain-source On Resistance-Max:3.4 mΩ
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