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BUZ76-E3045

Infineon · Transistor

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Infineon BUZ76-E3045

Infineon BUZ76-E3045 overview

Infineon Technologies AG BUZ76-E3045 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...

Manufactured byInfineon
Part number or familyBUZ76-E3045
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG BUZ76-E3045 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:400 V, Number of Elements:1, Drain Current-Max (ID):3 A, Drain-source On Resistance-Max:1.8 Ω

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore Power Field-effect Transistors
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