Infineon BSO110N03MSG overview
BSO110N03MSG is a transistor made by Infineon. Infineon Technologies AG BSO110N03MSG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):10…
Product details
Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG BSO110N03MSG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):10 A, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:13.9 Ω
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