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BSC080N03MSG

Infineon · Transistor

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Infineon BSC080N03MSG

Infineon BSC080N03MSG overview

Infineon Technologies AG BSC080N03MSG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIOD...

Manufactured byInfineon
Part number or familyBSC080N03MSG
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG BSC080N03MSG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):53 A, Drain Current-Max (ID):13 A, Drain-source On Resistance-Max:10.2 mΩ

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore Power Field-effect Transistors
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