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TDB6HK180N16RR

Infineon Technologies AG TDB6HK180N16RR Igbt

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Infineon Technologies AG TDB6HK180N16RR Igbt

Infineon TDB6HK180N16RR overview

Infineon Technologies AG TDB6HK180N16RR Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):140 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:29, Number of Elements:1

Manufactured byInfineon
Part number or familyTDB6HK180N16RR
Product groupTransistors

What is Infineon TDB6HK180N16RR?

Infineon Technologies AG TDB6HK180N16RR Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):140 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:29, Number of Elements:1

Product details

Manufactured byInfineon
Product groupTransistors
DescriptionInfineon Technologies AG TDB6HK180N16RR Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):140 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:29, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistors Explore Transistors Explore IGBTs
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