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SIGC81T60N

Infineon ยท Transistor

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Infineon SIGC81T60N

Infineon SIGC81T60N overview

SIGC81T60N is a transistor made by Infineon. Infineon Technologies AG SIGC81T60N Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):100 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Elements:1

Manufactured byInfineon
Part number or familySIGC81T60N
Product typeTransistor

Product details

Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG SIGC81T60N Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):100 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product type Transistor Explore Transistor Explore IGBTs
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