Infineon SIGC39T60EX1SA1 overview
Infineon Technologies AG SIGC39T60EX1SA1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):75 A, Polarit...
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Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG SIGC39T60EX1SA1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):75 A, Polarity/Channel Type:N-CHANNEL
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