Infineon SIGC15T60EX1SA1 overview
SIGC15T60EX1SA1 is a transistor made by Infineon. Infineon Technologies AG SIGC15T60EX1SA1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES
Product details
Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG SIGC15T60EX1SA1 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES
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