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SIGC08T60EX1SA3

Infineon ยท Transistor

Infineon SIGC08T60EX1SA3

Infineon SIGC08T60EX1SA3 overview

Infineon Technologies AG SIGC08T60EX1SA3 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):15 A, Polarit...

Manufactured byInfineon
Part number or familySIGC08T60EX1SA3
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG SIGC08T60EX1SA3 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):15 A, Polarity/Channel Type:N-CHANNEL

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore IGBTs
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