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SIGC03T60E

Infineon ยท Transistor

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Infineon SIGC03T60E

Infineon SIGC03T60E overview

Infineon Technologies AG SIGC03T60E Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Polarity/Channel Type:N-CHANNEL, Surface Moun...

Manufactured byInfineon
Part number or familySIGC03T60E
Product typeTransistor

Product details

Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG SIGC03T60E Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:Single, Number of Terminals:2, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product type Transistor Explore Transistor Explore IGBTs
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