Infineon SGW15N120 overview
Infineon Technologies AG SGW15N120 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):30 A, Polarity/Chann...
Product details
Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG SGW15N120 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Infineon
View Infineon profile
Available from
Sourcing support available
Start a sourcing request