Infineon SGD02N60XT overview
SGD02N60XT is a transistor made by Infineon. Infineon Technologies AG SGD02N60XT Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
Product details
Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG SGD02N60XT Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
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