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SGB10N60

Infineon Technologies AG SGB10N60 Igbt

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Infineon Technologies AG SGB10N60 Igbt

Infineon SGB10N60 overview

Infineon Technologies AG SGB10N60 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):21 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1

Manufactured byInfineon
Part number or familySGB10N60
Product groupTransistors

What is Infineon SGB10N60?

Infineon Technologies AG SGB10N60 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):21 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1

Product details

Manufactured byInfineon
Product groupTransistors
DescriptionInfineon Technologies AG SGB10N60 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):21 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistors Explore Transistors Explore IGBTs
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