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RGR3B60KD2TR

Infineon ยท Transistor

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Infineon RGR3B60KD2TR

Infineon RGR3B60KD2TR overview

Infineon Technologies AG RGR3B60KD2TR Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):7.8 A, Polarity/Channel Type:N-CHANNEL, Surface Moun...

Manufactured byInfineon
Part number or familyRGR3B60KD2TR
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG RGR3B60KD2TR Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):7.8 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore IGBTs
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