Infineon IRGR3B60KD2TRPBF overview
Infineon Technologies AG IRGR3B60KD2TRPBF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):7.8 A, Polar...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGR3B60KD2TRPBF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):7.8 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
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