Infineon IRGPC50FD1PBF overview
Infineon Technologies AG IRGPC50FD1PBF Igbt, Collector-Emitter Voltage-Max:600 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH B...
Product details
Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGPC50FD1PBF Igbt, Collector-Emitter Voltage-Max:600 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Infineon
View Infineon profile
Available from
Sourcing support available
Start a sourcing request