Infineon IRGPC50FD1 overview
Infineon Technologies AG IRGPC50FD1 Igbt, Collector-Emitter Voltage-Max:600 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUIL...
Product details
Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG IRGPC50FD1 Igbt, Collector-Emitter Voltage-Max:600 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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