Infineon IRGP8B120KD-E overview
Infineon Technologies AG IRGP8B120KD-E Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):20 A, Polarity/C...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGP8B120KD-E Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):20 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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