Infineon IRGP4660D-EPBBF overview
Infineon Technologies AG IRGP4660D-EPBBF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):100 A, Polari...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGP4660D-EPBBF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):100 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO
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