Infineon IRGMC30FD overview
Infineon Technologies AG IRGMC30FD Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):23 A, Polarity/Chan...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGMC30FD Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):23 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
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