Infineon IRGCC50FE overview
Infineon Technologies AG IRGCC50FE Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Polarity/Channel Type:N-CHANNEL, Surface Mount...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGCC50FE Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
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