Infineon IRGC8B60KBPBF overview
Infineon Technologies AG IRGC8B60KBPBF Igbt, Collector-Emitter Voltage-Max:600 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Numb...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGC8B60KBPBF Igbt, Collector-Emitter Voltage-Max:600 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1
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