Infineon IRGC2B60KB overview
Infineon Technologies AG IRGC2B60KB Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Polarity/Channel Type:N-CHANNEL
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGC2B60KB Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Polarity/Channel Type:N-CHANNEL
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