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IRGC100B60KB

Infineon ยท Transistor

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Infineon IRGC100B60KB

Infineon IRGC100B60KB overview

Infineon Technologies AG IRGC100B60KB Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Polarity/Channel Type:N-CHANNEL, Surface Mo...

Manufactured byInfineon
Part number or familyIRGC100B60KB
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGC100B60KB Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore IGBTs
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