Infineon IRGBC30FD1PBF overview
Infineon Technologies AG IRGBC30FD1PBF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):31 A, Polarity/...
Product details
Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGBC30FD1PBF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.5 V, Collector Current-Max (IC):31 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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