Infineon IRGBC20SD2-E overview
Infineon Technologies AG IRGBC20SD2-E Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):19 A, Polarity/Channel Type:N-CHANNEL, Surface Mount...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRGBC20SD2-E Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):19 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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