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IRG4PH40KD

Infineon ยท Transistor

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Infineon IRG4PH40KD

Infineon IRG4PH40KD overview

Infineon Technologies AG IRG4PH40KD Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):30 A, Polarity/Chan...

Manufactured byInfineon
Part number or familyIRG4PH40KD
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRG4PH40KD Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore IGBTs
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