Infineon IRG4BC30FD-STRLPBF overview
Infineon Technologies AG IRG4BC30FD-STRLPBF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):31 A, Polari...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IRG4BC30FD-STRLPBF Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):31 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
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