Infineon ILD03N60 overview
Infineon Technologies AG ILD03N60 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:3.9 V, Collector Current-Max (IC):4.5 A, Polarity/Chan...
Product details
Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG ILD03N60 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:3.9 V, Collector Current-Max (IC):4.5 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
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