Infineon IKB03N120H2-E3045A overview
Infineon Technologies AG IKB03N120H2-E3045A Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:3.9 V, Collector Current-Max (IC):9.6 A, Po...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IKB03N120H2-E3045A Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:3.9 V, Collector Current-Max (IC):9.6 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
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