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IGC06R60D

Infineon ยท Transistor

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Infineon IGC06R60D

Infineon IGC06R60D overview

Infineon Technologies AG IGC06R60D Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.7 V, Polarity/Channel Type:N-CHANNEL, Surface Mount...

Manufactured byInfineon
Part number or familyIGC06R60D
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG IGC06R60D Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5.7 V, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore IGBTs
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