Infineon FS75R07N2E4 overview
FS75R07N2E4 is a transistor made by Infineon. Infineon Technologies AG FS75R07N2E4 Igbt, Collector-Emitter Voltage-Max:650 V, Collector Current-Max (IC):75 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR, Number of Terminals:19, Number of…
Product details
Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG FS75R07N2E4 Igbt, Collector-Emitter Voltage-Max:650 V, Collector Current-Max (IC):75 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR, Number of Terminals:19, Number of Elements:6
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