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FP50R07N2E4

Infineon ยท Transistor

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Infineon FP50R07N2E4

Infineon FP50R07N2E4 overview

Infineon Technologies AG FP50R07N2E4 Igbt, Collector-Emitter Voltage-Max:650 V, Gate-Emitter Thr Voltage-Max:6.45 V, Collector Current-Max (IC):70 A, Polarity/C...

Manufactured byInfineon
Part number or familyFP50R07N2E4
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG FP50R07N2E4 Igbt, Collector-Emitter Voltage-Max:650 V, Gate-Emitter Thr Voltage-Max:6.45 V, Collector Current-Max (IC):70 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:31, Number of Elements:7

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore IGBTs
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