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FP50R06W2E3_B11

Infineon Technologies AG FP50R06W2E3_B11 Igbt

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Infineon Technologies AG FP50R06W2E3_B11 Igbt

Infineon FP50R06W2E3_B11 overview

Infineon Technologies AG FP50R06W2E3_B11 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):65 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:23, Number of Elements:7

Manufactured byInfineon
Part number or familyFP50R06W2E3_B11
Product groupTransistors

What is Infineon FP50R06W2E3_B11?

Infineon Technologies AG FP50R06W2E3_B11 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):65 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:23, Number of Elements:7

Product details

Manufactured byInfineon
Product groupTransistors
DescriptionInfineon Technologies AG FP50R06W2E3_B11 Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):65 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:23, Number of Elements:7

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Manufactured by Infineon View Infineon profile
Product group Transistors Explore Transistors Explore IGBTs
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