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FP35R12W2T4

Infineon Technologies AG FP35R12W2T4 Igbt

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Infineon Technologies AG FP35R12W2T4 Igbt

Infineon FP35R12W2T4 overview

Infineon Technologies AG FP35R12W2T4 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):54 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:23, Number of Elements:7

Manufactured byInfineon
Part number or familyFP35R12W2T4
Product groupTransistors

What is Infineon FP35R12W2T4?

Infineon Technologies AG FP35R12W2T4 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):54 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:23, Number of Elements:7

Product details

Manufactured byInfineon
Product groupTransistors
DescriptionInfineon Technologies AG FP35R12W2T4 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):54 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:23, Number of Elements:7

Manufacturer, product group, and supply

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Manufactured by Infineon View Infineon profile
Product group Transistors Explore Transistors Explore IGBTs
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