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FD150R12RT4

Infineon ยท Transistor

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Infineon FD150R12RT4

Infineon FD150R12RT4 overview

Infineon Technologies AG FD150R12RT4 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BU...

Manufactured byInfineon
Part number or familyFD150R12RT4
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG FD150R12RT4 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore IGBTs
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