Infineon DF600R12IP4D overview
Infineon Technologies AG DF600R12IP4D Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):600 A, Polarity/Channel Type:N-CHANNEL, Surface Mou...
Product details
Manufactured byInfineon
Product typeTransistor
DescriptionInfineon Technologies AG DF600R12IP4D Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):600 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE AND THERMISTOR, Number of Terminals:8, Number of Elements:1
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