Infineon DF150R12RT4 overview
Infineon Technologies AG DF150R12RT4 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):150 A, Polarity/Channel Type:N-CHANNEL, Surface Moun...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG DF150R12RT4 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):150 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, Number of Elements:1
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