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DDB2U30N08VR

Infineon ยท Transistor

Infineon DDB2U30N08VR

Infineon DDB2U30N08VR overview

Infineon Technologies AG DDB2U30N08VR Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):25 A, Polarity/Channel Type:N-CHANNEL, Surface Mount...

Manufactured byInfineon
Part number or familyDDB2U30N08VR
Product groupTransistor

Product details

Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG DDB2U30N08VR Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):25 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR, Number of Terminals:12, Number of Elements:1

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Manufactured by Infineon View Infineon profile
Product group Transistor Explore Transistor Explore IGBTs
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