Infineon BUP307 overview
Infineon Technologies AG BUP307 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):35 A, Polarity/Channe...
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Manufactured byInfineon
Product groupTransistor
DescriptionInfineon Technologies AG BUP307 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):35 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO
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